Author/Authors :
Jain، نويسنده , , M. and Pedrazzani، نويسنده , , J.R. and Golding، نويسنده , , T.G. and Cottier، نويسنده , , R. and Holland، نويسنده , , O.W. and Hellmer، نويسنده , , R. and Wicks، نويسنده , , G.W.، نويسنده ,
Abstract :
This study reports on hydrogenation of InAs nBn photodetectors grown on a lattice mismatched GaAs substrate. The mismatched growth causes increases in dark current by factors of 8–16 (voltage- and temperature-dependent), with respect to similar lattice matched growth. UV hydrogenation of the mismatched nBn’s produced significant decrease in dark current without decreasing the photocurrent.
Keywords :
InAs , Dark current , NbN , Hydrogenation , detector
