Title of article :
The developments of InP-based quantum dot lasers
Author/Authors :
Li، نويسنده , , Denis S.G. and Gong، نويسنده , , Q. and Cao، نويسنده , , C.F. and Wang، نويسنده , , X.Z. and Yan، نويسنده , , J.Y. and Wang، نويسنده , , Y. and Wang، نويسنده , , H.L.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
9
From page :
216
To page :
224
Abstract :
Due to the low density states and high radiative efficiency, quasi-zero-dimensional quantum dot has already exposited major new advances in both fundamental physics and device applications. In this paper we concentrated on the recent developments of the InAs/InP system quantum dot lasers, operating nearby the important fiber communication system of 1.55 μm. In all cases, we stressed the significant progress in the understanding of basic optical and electronic properties to enable the importance steps forward. The developments have been almost covered the important advances for both large ensembles and for individual quantum dots devices, emphasizing the versatility of these systems in opening up a variety of new phenomena. The prospects for further progress directed towards new quantum dot laser for 2–3 μm, stability of single frequency operation with wide tunable range and single photon source are also described.
Keywords :
Quantum dot lasers , Indium phosphide , Optical and electrical properties , Self-assembled growth mode
Journal title :
Infrared Physics & Technology
Serial Year :
2013
Journal title :
Infrared Physics & Technology
Record number :
2376337
Link To Document :
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