Influence of the Ar8+ and O6+ ion implantation on the recombination parameters of p and n type implanted Si samples investigated by means of the photothermal infrared radiometry

This paper presents the influence of Ar8+ and O6+ ion implantation on the recombination parameters of n and p type Si samples. These parameters were determined from the fitting of theoretical characteristics to the experimental photothermal radiometric (PTR) characteristics. We found that with the increasing ion implantation doses (i) the changes of the bulk recombination lifetimes and the carrier diffusivity were not observed; (ii) the increasing of the surface recombination velocities and the parameter A were observed. This paper also proves that it is possible to interpret the experimental PTR characteristics with a relatively simple effective model of a PTR signal.