Title of article
Model of Vernier devices in silicon-on-insulator technology
Author/Authors
Fan، نويسنده , , Guofang and Li، نويسنده , , Yuan and Hu، نويسنده , , Chunguang and Lei، نويسنده , , Lihua and Zhao، نويسنده , , Dong and Li، نويسنده , , Hongyu and Luo، نويسنده , , Yunhan and Zhen، نويسنده , , Zhen، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
4
From page
83
To page
86
Abstract
In order to increase the number of channels that could be multiplexed or demultiplexed in the dense wavelength division multiplexed (DWDM) system based on the resonators on silicon-on-insulator (SOI) technology, the Vernier effect in the series-coupled racetrack resonators is presented to extend the free spectral range (FSR) of the DWDM systems. A method is developed based on a matrix approach to simulate Vernier devices. A three-dimensional full vectorial finite difference (FVFD) model, specifically suited for high index contrast and smaller size waveguides, for example, a waveguide in SOI technology, is developed to obtain the properties of a waveguide. Finally, the Vernier effect in the two series-coupled racetrack resonators is experimentally verified with an improved FSR and interstitial resonance suppression.
Keywords
FVFD , Vernier effect , Series-coupled racetrack resonators
Journal title
Infrared Physics & Technology
Serial Year
2014
Journal title
Infrared Physics & Technology
Record number
2376611
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