Title of article
Sub-nanosecond passively Q-switched Nd:YVO4/Cr4+:YAG microchip lasers
Author/Authors
Han، نويسنده , , Shuo and Liu، نويسنده , , Yanqing and Zhang، نويسنده , , Fang and Yu، نويسنده , , Haohai and Wang، نويسنده , , Zhengping and Gu، نويسنده , , Qingtian and Xu، نويسنده , , Xinguang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2015
Pages
4
From page
197
To page
200
Abstract
Sub-nanosecond passively Q-switched microchip lasers based on Nd:YVO4 and Cr4+:YAG were reported. On the whole, 2 at.% doped Nd:YVO4 crystals exhibited better performance than 3 at.% doped crystals. The shortest pulse duration of 693 ps was obtained from a-cut, 2 at.% doped Nd:YVO4, and the highest peak power of 32 kW, largest pulse energy of 29 μJ were produced by c-cut, 2 at.% doped sample. These experiment results illustrate that Nd:YVO4 and Cr4+:YAG are good combination for producing sub-nanosecond, high peak power microchip lasers.
Keywords
Nd:YVO4/Cr4+:YAG , Microchip Laser , Sub-nanosecond
Journal title
Infrared Physics & Technology
Serial Year
2015
Journal title
Infrared Physics & Technology
Record number
2376839
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