Sub-nanosecond passively Q-switched Nd:YVO4/Cr4+:YAG microchip lasers

Sub-nanosecond passively Q-switched microchip lasers based on Nd:YVO4 and Cr4+:YAG were reported. On the whole, 2 at.% doped Nd:YVO4 crystals exhibited better performance than 3 at.% doped crystals. The shortest pulse duration of 693 ps was obtained from a-cut, 2 at.% doped Nd:YVO4, and the highest peak power of 32 kW, largest pulse energy of 29 μJ were produced by c-cut, 2 at.% doped sample. These experiment results illustrate that Nd:YVO4 and Cr4+:YAG are good combination for producing sub-nanosecond, high peak power microchip lasers.