• Title of article

    A computational study of natural convection in a liquid-encapsulated molten semiconductor with a horizontal magnetic field

  • Author/Authors

    Yang، نويسنده , , Mei and Ma، نويسنده , , Nancy، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2005
  • Pages
    7
  • From page
    810
  • To page
    816
  • Abstract
    This paper treats the natural convection in a layer of boron oxide, called a liquid encapsulant, which lies above a layer of a molten compound semiconductor (melt) between cold and hot vertical walls in a rectangular container with a steady horizontal magnetic field B. The magnetic field provides an electromagnetic (EM) damping of the molten semiconductor which is an excellent electrical conductor but has no direct effect on the motion of the liquid encapsulant. This study uses a Chebyshev spectral collocation method to investigate the coupling between the natural convection in the boron oxide and melt.
  • Keywords
    Semiconductor crystal growth , magnetic Fields , Computational model , III–V compounds
  • Journal title
    International Journal of Heat and Fluid Flow
  • Serial Year
    2005
  • Journal title
    International Journal of Heat and Fluid Flow
  • Record number

    2381284