Title of article :
A computational study of natural convection in a liquid-encapsulated molten semiconductor with a horizontal magnetic field
Author/Authors :
Yang، نويسنده , , Mei and Ma، نويسنده , , Nancy، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
7
From page :
810
To page :
816
Abstract :
This paper treats the natural convection in a layer of boron oxide, called a liquid encapsulant, which lies above a layer of a molten compound semiconductor (melt) between cold and hot vertical walls in a rectangular container with a steady horizontal magnetic field B. The magnetic field provides an electromagnetic (EM) damping of the molten semiconductor which is an excellent electrical conductor but has no direct effect on the motion of the liquid encapsulant. This study uses a Chebyshev spectral collocation method to investigate the coupling between the natural convection in the boron oxide and melt.
Keywords :
Semiconductor crystal growth , magnetic Fields , Computational model , III–V compounds
Journal title :
International Journal of Heat and Fluid Flow
Serial Year :
2005
Journal title :
International Journal of Heat and Fluid Flow
Record number :
2381284
Link To Document :
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