Title of article
A computational study of natural convection in a liquid-encapsulated molten semiconductor with a horizontal magnetic field
Author/Authors
Yang، نويسنده , , Mei and Ma، نويسنده , , Nancy، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
7
From page
810
To page
816
Abstract
This paper treats the natural convection in a layer of boron oxide, called a liquid encapsulant, which lies above a layer of a molten compound semiconductor (melt) between cold and hot vertical walls in a rectangular container with a steady horizontal magnetic field B. The magnetic field provides an electromagnetic (EM) damping of the molten semiconductor which is an excellent electrical conductor but has no direct effect on the motion of the liquid encapsulant. This study uses a Chebyshev spectral collocation method to investigate the coupling between the natural convection in the boron oxide and melt.
Keywords
Semiconductor crystal growth , magnetic Fields , Computational model , III–V compounds
Journal title
International Journal of Heat and Fluid Flow
Serial Year
2005
Journal title
International Journal of Heat and Fluid Flow
Record number
2381284
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