Title of article :
The effect of conduction band nonparabolicity on binding energy of a GaAs quantum dot embedded at the center of a Ga1-xAlxAs nano-wire
Author/Authors :
Safarpour، GH نويسنده 1Zarghan Branch, Islamic Azad University, Zarghan, Iran , , Moradi، M نويسنده 2Department of Physics, College of Sciences, Shiraz University, Shiraz 71454, Iran , , Izadi، M A نويسنده arghan Branch, Islamic Azad University, Zarghan, Iran , , Novzari، M نويسنده Zarghan Branch, Islamic Azad University, Zarghan, Iran , , Niknam، E نويسنده Zarghan Branch, Islamic Azad University, Zarghan, Iran ,
Issue Information :
فصلنامه با شماره پیاپی 0 سال 2015
Pages :
6
From page :
253
To page :
258
Abstract :
The effects of conduction band nonparabolicity, aluminum concentration and external electric field on the charge density and binding energy of an on-center hydrogenic donor impurity in a spherical quantum dot which is located at the center of a cylindrical nano-wire are studied. The energy eigenvalues and the corresponding wave functions are calculated using finite difference approximation within the effective mass framework. The results reveal that the binding energies (I) decrease as the electric field increases, (II) become negligible for large values of electric field, (III) increase as the aluminum concentration increases and (IV) the conduction band nonparabolicity has a noticeable effect on the binding energy, and hence should be taken into account.
Journal title :
Iranian Journal of Science and Technology Transaction A: Science
Serial Year :
2015
Journal title :
Iranian Journal of Science and Technology Transaction A: Science
Record number :
2388189
Link To Document :
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