Title of article
The Effect of Doping and the Thickness of the Layers on CIGS Solar Cell Efficiency
Author/Authors
Hashemi Nassab، Sayed Mohammad Sadegh نويسنده Department of Electrical Engineering, Fasa Branch, Islamic Azad University, Fasa, Iran , , Imanieh، Mohsen نويسنده Department of Electrical Engineering, Fasa Branch, Islamic Azad University, Fasa, Iran , , Kamaly، Abbas نويسنده Department of Electrical Engineering, Fasa Branch , Islamic Azad University, Fasa, Iran ,
Issue Information
فصلنامه با شماره پیاپی 1 سال 2016
Pages
15
From page
9
To page
23
Abstract
The main problems with the use of fossil fuels is the restrictions on their access and the detrimental consequences of their use which causes a threat to human health and quality of life. Consequently, the use of other energy sources has become necessary. Renewable Energy as a permanent and clean energy source is an answer to this problem. One such energy source includes photovoltaic solar energy that is widely available as a reliable energy source. Research and Development of Photovoltaic Energy in general, will reduce costs and improve efficiency in both areas. CIGS solar cells have higher efficiency in comparison with other cells. Ion implantation and doping technique offers the unique structure of a solar cells. This paper will examine the performance of solar cells with Cu In1-x Gax Se2 structure. This will be performed by Silvaco software. Effect of doping phosphorus (p) and Natrium (Na), as well as the value of x and the thickness of the various layers of the solar cell, on the efficiency of the cell, have been studied.
Journal title
Journal of Optoelectronical Nanostructures
Serial Year
2016
Journal title
Journal of Optoelectronical Nanostructures
Record number
2396106
Link To Document