• Title of article

    Energy band correction due to one dimension tension in phosphorene

  • Author/Authors

    Izadparast، Ali نويسنده Department of Physics,Isfahan University of Technology. Isfahan,Isfahan,Iran , , Sahebsara، Peyman نويسنده Department of Physics,Isfahan University of Technology. Isfahan,Isfahan,Iran ,

  • Issue Information
    فصلنامه با شماره پیاپی سال 2016
  • Pages
    9
  • From page
    59
  • To page
    67
  • Abstract
    Among graphene-like family, phosphorene is a typical semiconducting layered material, which can also be a superconductor in low temperature. Applying pressure or tension on phosphorene lattice results in changing the hopping terms, which change the energy bands of the material. In this research we use the tight-binding Hamiltonian, including relevant hopping terms, to calculate energy bands of normal and under tension phosphorene. Our results show that the energy gap decreases by decreasing 𝒕𝟐/𝒕𝟏from 3 to 2, and finally the gap disappears.
  • Keywords
    Energy band gap , Electron conductivity , tension , phosphorene , band structure
  • Journal title
    Journal of Optoelectronical Nanostructures
  • Serial Year
    2016
  • Journal title
    Journal of Optoelectronical Nanostructures
  • Record number

    2402151