Title of article
Energy band correction due to one dimension tension in phosphorene
Author/Authors
Izadparast، Ali نويسنده Department of Physics,Isfahan University of Technology. Isfahan,Isfahan,Iran , , Sahebsara، Peyman نويسنده Department of Physics,Isfahan University of Technology. Isfahan,Isfahan,Iran ,
Issue Information
فصلنامه با شماره پیاپی سال 2016
Pages
9
From page
59
To page
67
Abstract
Among graphene-like family, phosphorene is a typical semiconducting layered material, which can also be a superconductor in low temperature. Applying pressure or tension on phosphorene lattice results in changing the hopping terms, which change the energy bands of the material. In this research we use the tight-binding Hamiltonian, including relevant hopping terms, to calculate energy bands of normal and under tension phosphorene. Our results show that the energy gap decreases by decreasing 𝒕𝟐/𝒕𝟏from 3 to 2, and finally the gap disappears.
Keywords
Energy band gap , Electron conductivity , tension , phosphorene , band structure
Journal title
Journal of Optoelectronical Nanostructures
Serial Year
2016
Journal title
Journal of Optoelectronical Nanostructures
Record number
2402151
Link To Document