Title of article :
Energy band correction due to one dimension tension in phosphorene
Author/Authors :
Izadparast، Ali نويسنده Department of Physics,Isfahan University of Technology. Isfahan,Isfahan,Iran , , Sahebsara، Peyman نويسنده Department of Physics,Isfahan University of Technology. Isfahan,Isfahan,Iran ,
Issue Information :
فصلنامه با شماره پیاپی سال 2016
Pages :
9
From page :
59
To page :
67
Abstract :
Among graphene-like family, phosphorene is a typical semiconducting layered material, which can also be a superconductor in low temperature. Applying pressure or tension on phosphorene lattice results in changing the hopping terms, which change the energy bands of the material. In this research we use the tight-binding Hamiltonian, including relevant hopping terms, to calculate energy bands of normal and under tension phosphorene. Our results show that the energy gap decreases by decreasing 𝒕𝟐/𝒕𝟏from 3 to 2, and finally the gap disappears.
Keywords :
Energy band gap , Electron conductivity , tension , phosphorene , band structure
Journal title :
Journal of Optoelectronical Nanostructures
Serial Year :
2016
Journal title :
Journal of Optoelectronical Nanostructures
Record number :
2402151
Link To Document :
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