Title of article :
Micromagnetic analysis of Heusler alloy-based perpendicular double barrier synthetic antiferromagnetic free layer MTJs
Author/Authors :
Ghosh, Bahniman Microelectronics Research Center - University of Texas at Austin, Austin, USA , Dwivedi, Kshitij Microelectronics Research Center - University of Texas at Austin, Austin, USA
Abstract :
We investigate spin transfer torque switching in
a perpendicular double barrier synthetic antiferromagnetic
free layer MTJ stack using micromagnetic simulations. For
the material used in free layers, we use two different Cobaltbased
Heusler alloys and compare their performance on the
basis of switching speed, thermal stability and Tunnel
magnetoresistance. We show that for Heusler alloys
switching from one state to other is significantly faster but
they suffer from the drawback of low thermal stability.
Keywords :
Magnetic tunnel junctions , Micromagnetic simulations , Perpendicular anisotropy , Synthetic antiferromagnet , Heusler alloys
Journal title :
Astroparticle Physics