Title of article :
Micromagnetic analysis of Heusler alloy-based perpendicular double barrier synthetic antiferromagnetic free layer MTJs
Author/Authors :
Ghosh, Bahniman Microelectronics Research Center - University of Texas at Austin, Austin, USA , Dwivedi, Kshitij Microelectronics Research Center - University of Texas at Austin, Austin, USA
Pages :
6
From page :
207
To page :
212
Abstract :
We investigate spin transfer torque switching in a perpendicular double barrier synthetic antiferromagnetic free layer MTJ stack using micromagnetic simulations. For the material used in free layers, we use two different Cobaltbased Heusler alloys and compare their performance on the basis of switching speed, thermal stability and Tunnel magnetoresistance. We show that for Heusler alloys switching from one state to other is significantly faster but they suffer from the drawback of low thermal stability.
Keywords :
Magnetic tunnel junctions , Micromagnetic simulations , Perpendicular anisotropy , Synthetic antiferromagnet , Heusler alloys
Journal title :
Astroparticle Physics
Serial Year :
2015
Record number :
2407253
Link To Document :
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