• Title of article

    Micromagnetic analysis of Heusler alloy-based perpendicular double barrier synthetic antiferromagnetic free layer MTJs

  • Author/Authors

    Ghosh, Bahniman Microelectronics Research Center - University of Texas at Austin, Austin, USA , Dwivedi, Kshitij Microelectronics Research Center - University of Texas at Austin, Austin, USA

  • Pages
    6
  • From page
    207
  • To page
    212
  • Abstract
    We investigate spin transfer torque switching in a perpendicular double barrier synthetic antiferromagnetic free layer MTJ stack using micromagnetic simulations. For the material used in free layers, we use two different Cobaltbased Heusler alloys and compare their performance on the basis of switching speed, thermal stability and Tunnel magnetoresistance. We show that for Heusler alloys switching from one state to other is significantly faster but they suffer from the drawback of low thermal stability.
  • Keywords
    Magnetic tunnel junctions , Micromagnetic simulations , Perpendicular anisotropy , Synthetic antiferromagnet , Heusler alloys
  • Journal title
    Astroparticle Physics
  • Serial Year
    2015
  • Record number

    2407253