Title of article
Micromagnetic analysis of Heusler alloy-based perpendicular double barrier synthetic antiferromagnetic free layer MTJs
Author/Authors
Ghosh, Bahniman Microelectronics Research Center - University of Texas at Austin, Austin, USA , Dwivedi, Kshitij Microelectronics Research Center - University of Texas at Austin, Austin, USA
Pages
6
From page
207
To page
212
Abstract
We investigate spin transfer torque switching in
a perpendicular double barrier synthetic antiferromagnetic
free layer MTJ stack using micromagnetic simulations. For
the material used in free layers, we use two different Cobaltbased
Heusler alloys and compare their performance on the
basis of switching speed, thermal stability and Tunnel
magnetoresistance. We show that for Heusler alloys
switching from one state to other is significantly faster but
they suffer from the drawback of low thermal stability.
Keywords
Magnetic tunnel junctions , Micromagnetic simulations , Perpendicular anisotropy , Synthetic antiferromagnet , Heusler alloys
Journal title
Astroparticle Physics
Serial Year
2015
Record number
2407253
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