Title of article :
Energy band correction due to one dimension tension in phosphorene
Author/Authors :
Izadparast, Ali Department of Physics, Isfahan University of Technology. Isfahan, Iran , Sahebsara, Peyman Department of Physics, Isfahan University of Technology. Isfahan, Iran
Pages :
10
From page :
59
To page :
68
Abstract :
Among graphene-like family, phosphorene is a typical semiconducting layered material, which can also be a superconductor in low temperature. Applying pressure or tension on phosphorene lattice results in changing the hopping terms, which change the energy bands of the material. In this research we use the tight-binding Hamiltonian, including relevant hopping terms, to calculate energy bands of normal and under tension phosphorene. Our results show that the energy gap decreases by decreasing 𝒕𝟐/𝒕𝟏from 3 to 2, and finally the gap disappears
Keywords :
phosphorene , band structure , electron conductivity , tension , energy band gap
Journal title :
Astroparticle Physics
Serial Year :
2017
Record number :
2424618
Link To Document :
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