Author/Authors :
Rezaei, Arash Department of Electrical & Computer Engineering, Babol Noshirvani University of Technology, Babol, Iran. , Azizollah-Ganji, Bahram Department of Electrical & Computer Engineering, Babol Noshirvani University of Technology, Babol, Iran. , Gholipour, Morteza Department of Electrical & Computer Engineering, Babol Noshirvani University of Technology, Babol, Iran.
Abstract :
Field Effect Diode (FED)s are interesting device in providing the higher
ON-state current and lower OFF–state current in comparison with SOI-MOSFET
structures with similar dimensions. The impact of channel length and band-to-band
tunneling (BTBT) on the OFF-state current of the side contacted FED (S-FED) has been
investigated in this paper. To find the lowest effective channel length, this device is
simulated with 75, 55 and 35 nm channel length and the results obtained are presented
in this article. Our numerical results show that the ION/IOFF ratio can be varied from 104
to 100 for S-FED as the channel lengths decrease. We demonstrate that for channel
lengths shorter than 35 nm by considering the Band-to-Band tunneling model, the SFED
device does not turn off.
Keywords :
Field Effect Diode (FED) , Side Contacted FED (S-FED) , Band-To- Band-Tunneling (BTBT) , ION/IOFF Ratio
