Simulation of the Process of LDMOS Transistor Manufacture and Optimizing it to Increase the Current of Work

This paper presents the simulation of the process of LDMOS transistor manufacturing by using Silvaco software and by relying on the ability of calculating the basic parameters of transistor dependencies, focusing on the optimization of the manufacturing process in order to increase the current of work. By using this simulation and reviewing each parameter, we can achieve the optimized manufacturing process by focusing each basic parameter and by paying attention to its required application. In order to design, we first define the construction procedures and the necessary processes using the Athena simulator, and then we use the Atlas device simulator to acquire electrical parameters. Simulation results show that by selecting the optimal parameters of the manufacturing process such as gate oxide thickness, channel length, and doping in channel, we can increase current of the LDMOS transistor.