Title of article :
Investigation on electronic transport property of cerium nitride nanoribbon-based molecular device: a first-principles study
Author/Authors :
Chandiramouli, R School of Electrical and Electronics Engineering - SASTRA University - Thanjavur, India , Gopinath, P School of Electrical and Electronics Engineering - SASTRA University - Thanjavur, India , Sriram, S School of Electrical and Electronics Engineering - SASTRA University - Thanjavur, India
Abstract :
Cerium nitride-based molecular device transport
properties are investigated using density functional
theory. The electronic transport properties are related in
terms of density of states (DOS) and transmission spectrum.
The peak maximum in the DOS arises due to the
overlapping of different orbitals of cerium and nitrogen
atoms. Under zero bias condition, the contribution of
f orbitals in cerium atom is seen whereas increasing the
bias voltage, f electrons gets perturbed and there is no
contribution of f orbital electrons for higher bias voltages.
The electron density is seen more in nitrogen sites. The
transmission of charges under various bias voltages gives
the transmission spectrum. The geometry of structure and
overlapping of orbitals leads to the variation in peak
maximum in the nanoribbon. The electronic transport
property of CeN nanoribbon provides an insight to enhance
the transport property in functional nanomaterials.
Keywords :
Nanoribbon , Transport property , Density of states , Cerium nitride
Journal title :
Astroparticle Physics