Study on the correlation between crystallite size and optical gap energy of doped ZnO thin film

In the present paper, we have studied a new approach to the description of correlation between the optical and structural properties of ZnO thin films with doping levels of Al, Co, and In. The doped zinc oxide thin films were deposited using ultrasonic spray technique on a glass substrate at 350°C. The correlation between structural and optical properties with doping level suggests that the crystallite size of the films is predominantly estimated by the bandgap energy and the concentration of Al, Co, and In. Also, the gap energy of doped films was estimated by the crystallite size and doping level. The measurement in the crystallite size and optical gap energy of doped films with correlation is equal to the experimental data. The minimum error value was estimated in doped ZnO thin films with indium and cobalt. Thus, results indicate that such Co-doped ZnO thin films are chemically purer and have many fewer defects and less disorder, owing to an almost complete chemical decomposition.