Title of article :
DFT/TDDFT study of electronic and optical properties of Surfacepassivated Silicon nanocrystals, Sin (n 5 20, 24, 26 and 28)
Author/Authors :
Chopra, S Department of Physics - AIAS - Amity University - Noida, India , Rai, B Department of Physics - AIAS - Amity University - Noida, India
Abstract :
Density functional theory and Time-dependent
density functional theory (TDDFT)-based calculations
were performed on surface-passivated Silicon nanocrystals
(SPSNs) of different sizes. The surface passivation was
achieved using H, F and Cl atoms. Various properties of
the resulting optimized structures SinHn, Sin
Hn-1F and
SinHn-1Cl (n = 20, 24, 26 and 28) like binding Energy,
dipole moment, HOMO–LUMO gap, vibrational IR spectra
and absorption wavelengths were determined. Surface
passivation studies reveal that all the SPSNs are insulators
and TDDFT study performed using two basis sets 6-31G
and 6-31?G (d,p) shows that the maximum optical
absorption of all the samples lie in the UV region, except
for Si28H27F SPSN which shows maximum absorption
at *588 nm. The absorption transitions in the SinHn, Sin-
Hn-1F and SinHn-1Cl were characterized to be from
pi?pi* transitions.
Keywords :
Surface passivation , Silicon nanocrystals , DFT , TDDFT , Optical absorption
Journal title :
Astroparticle Physics