Title of article :
Room temperature photo-induced, Eu3+-doped IGZO transparent thin films fabricated using sol–gel method
Author/Authors :
Krishnan, Rajagopalan Department of Physics - B.S. Abdur Rahman University - Vandalur - Tamil Nadu, India , Thirumalai, Jagannathan Department of Physics - B.S. Abdur Rahman University - Vandalur - Tamil Nadu, India , Chandramohan, Rathinam Department of Physics - Sree Sevugan Annamalai College - Tamil Nadu, India
Abstract :
Red-emitting Eu3+-doped indium gallium zinc oxide (IGZO) transparent thin films were fabricated using sol–gel method
under UV (254-nm irradiation) in nitrogen atmosphere (inside the glove box) and thermally annealed at 500°C for 1 h.
Structure, morphology, composition, and optical properties of the materials were examined using X-ray diffraction
analysis, scanning electron microscope, X-ray photoelectron spectroscopy, and photoluminescence, respectively.
Keywords :
Oxides , Annealing , Photoelectron spectroscopy , Luminescence
Journal title :
Astroparticle Physics
