Title of article :
DFT Study of Adsorption of Lithium on Si, Ge-doped Divacancy Defected Graphene as Anode Material of Li-ion Battery
Author/Authors :
Loghavi, M.M Institute of Mechanics - Iranian Space Research Center - Shiraz - Department of Chemistry - Yazd University , Mohammadi-Manesh, H Department of Chemistry - Yazd University , Eqra, R Institute of Mechanics - Iranian Space Research Center, Shiraz , Ghasemi, A Institute of Mechanics - Iranian Space Research Center, Shiraz , Babaiee, M Institute of Mechanics - Iranian Space Research Center, Shiraz
Pages :
8
From page :
871
To page :
878
Abstract :
Graphene is an anode material that is expected to be a good alternative for graphite to increase the capacity and ratecapability of lithium-ion batteries. Graphene synthesis is always accompanied by defects in the structure. The most common defect in graphene is the divacancy (DV) defect. In this study, the effect of this defect on the lithium adsorption was studied by density functional theory method. In addition, the doping effect of silicon and germanium atoms on the defective graphene structure was investigated. The bandgap energy of DV-defected graphene, which has an inverse relationship with electrical conductivity, remains constant with addition of germanium and decreases with addition of silicon. In all cases, along with lithium adsorption, the bandgap energy is increased, so that the germanium doped compound has the highest bandgap and the structure with no doped atom has the least bandgap. However, the difference in the minimum and maximum bandgap in structures is very low. The results show that the addition of silicon and germanium leads to stronger adsorption of lithium which means it is possible to raise the charge-discharge capacity of graphene through doping with elements while the material still has a high charge/discharge capability.
Keywords :
Adsorption , DFT , Defect , Doped , Graphene , Li-ion battery
Journal title :
Astroparticle Physics
Serial Year :
2018
Record number :
2450249
Link To Document :
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