Nano dispersed metal-ceramic composite materials of the Ni-SiO2 system

In the organic field effect transistors (OFETs) generation, the silicon gate oxide is 1-2 nm thick. A shrinking of this thickness down to less than 1 nm for the next generation will lead to a couple of orders of magnitude increase in tunneling as well as leakage currents. NiO-SiO2 can be used in a variety of devices, such as in circuit boards and detectors, including sensors, due to its porous structure. Owing to these specific properties, these composites attract the attention of many researches. The methods of sol-gel with using XRD (X-ray Diffraction) technique are used to determine the optimum conditions of obtaining composition and conditions of metallization. The obtained results show that increase in silicon oxide content in samples up to 10 wt. % would lead to almost complete the recrystallization of nickel particles at 50 °C.