Title of article
Non-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application
Author/Authors
Abdipour, A Department of Electrical Engineering - Amir Kabir University of Technology - Tehran, Iran , Ezzati, V Department of Electrical Engineering - Amir Kabir University of Technology - Tehran, Iran
Pages
8
From page
195
To page
202
Abstract
In this paper, a non-linear approach for design and analysis of solid-state power amplifiers
is presented and used for AlGaN-GaN high electron-mobility transistor (HEMTs) on SiC substrate for
Ku band(12.4 - 13.6 GHz) applications. With combining the output power of 8 transistors, maximum
output power of 46.3 dBm (42.6 W), PAE of 43% and linear gain of 22.9 dB were achieved and good
agreement has been obtained between the simulation and analysis results
Keywords
Ku band harmonic balance , Non-linear GaN modeling , power amplifier
Journal title
Astroparticle Physics
Serial Year
2018
Record number
2450587
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