Modeling of Temperature Dependency of Silicon Nitride Formation’s Kinetics during Reaction Bonded Method

An accurate prediction of reaction kinetics during silicon nitridation is of great importance in designing procedure of both material production and controlling of reaction. The key purpose of the current research is to study the consequence of temperature on the formation kinetics of reaction bonded silicon nitride (RBSN). To do so, nitrogen diffusion in the silicon nitride layer is deliberated as a reaction controlling factor and sharp interface technique based on this theory is used to improve the analytical model. In this developed model, the variations in the size of silicon particles are considered for the entire reaction. In the experimental phase, the extent of nitridation is measured for different reaction temperatures and 4 different reaction times and at that time, the incidence of full nitridation is shown by EDS analysis. Furthermore, an analytical approach was established for describing the kinetics of compound formation and the performance of the developed model evaluated through statistical analysis. There was good superposition among experimental data and calculations of the developed model which establishes the accuracy of considered presumptions and reaction mechanisms.