Title of article :
Methodological Note: Neural Monitoring With CMOS Image Sensors
Author/Authors :
yadegari, azar Department of Electrical Engineering - School of Electrical Engineering - Iran University of Science and Technology, Tehran, Iran. , karami, mohammd azim Department of Electrical Engineering - School of Electrical Engineering - Iran University of Science and Technology, Tehran, Iran. , daliri, mohammad reza Department of Electrical Engineering - School of Electrical Engineering - Iran University of Science and Technology, Tehran, Iran.
Abstract :
Implantable image sensors have several biomedical applications due to their miniature size,
light weight, and low power consumption achieved through sub-micron standard CMOS
(Complementary Metal Oxide Semiconductor) technologies. The main applications are in
specific cell labeling, neural activity detection, and biomedical imaging. In this paper the
recent research studies on implantable CMOS image sensors for neural activity monitoring
of brain are being quantified and reviewed. Based on the results, the suitable implantable
image sensors for brain neural monitoring should have high signal to noise ratio of above 60
dB, high dynamic range of near 88 dB and low power consumption than the safety threshold
of 4W/cm2. Moreover, it is found out that the next generation of implantable imaging device
trend should reduce the pixel size and power consumption of CMOS image sensors to
increase spatial resolution of sample images.
Keywords :
Image sensor , Implantable devices , Neural monitoring
Journal title :
Astroparticle Physics