Title of article
Effect of Nd:YAG laser irradiation on the characteristics of porous silicon photodetector
Author/Authors
Ismail, Raid A Baghdad University of Technology - Iraq , Abood, Marwa K Baghdad University of Technology - Iraq
Pages
8
From page
1
To page
8
Abstract
Electrical and photoresponse properties of a Al/porous silicon/crystalline silicon/Al structure (Al/PSi/Si/Al) are
investigated under irradiation of Nd:YAG laser pulses. The effect of Nd-YAG laser irradiation on the morphological
and structural properties of a porous silicon layer is also demonstrated. The porous Si layer is synthesized on a
single crystalline p-type Si using electrochemical etching in aqueous hydrofluoric acid at a current density of 20
mA/cm2 for a 40-min etching time. The structure of the porous layer is investigated using atomic force microscopy
and optical microscopy. The electrical properties and photodetector figures of merit (responsivity, detectivity, and
carrier lifetime) are found to be dependent on the laser fluence.
Keywords
Porous silicon , Electrochemical etching , Nd:YAG laser , Photodetector , Figures of merit
Journal title
Astroparticle Physics
Serial Year
2013
Record number
2478202
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