Coexistence of flamentary and homogeneous resistive switching with memristive and meminductive memory efects in Al/MnO2/SS thin flm metal–insulator–metal device

In the present investigation, we have experimentally demonstrated the coexistence of flamentary and homogeneous resistive switching mechanisms in single Al/MnO2/SS thin flm metal–insulator–metal device. The voltage-induced resistive switching leads to clockwise and counter-clockwise resistive switching efects. The present investigations confrm that the coexistence of both RS mechanisms is dependent on input voltage, charge-fux and time. Furthermore, the non-zero I–V crossing locations and crossovers hysteresis loops suggested that the developed device has memristive and meminductive properties. The memristive and meminductive memory efects are further confrmed by electrochemical impedance spectroscopy. The results suggested that the mem-device dynamics and electrochemical kinetics during diferent voltage sweeps and sweep rates are responsible for the coexistence of flamentary and homogeneous resistive switching mechanisms as well as memristive and meminductive memory efect in single Al/MnO2/SS metal–insulator–metal device. The coexistence of both RS efects is useful for the development of high-performance resistive memory and electronic synapse devices. Furthermore, the coexistence of memristive and meminductive memory efects is important for the development of adaptive and self-resonating devices and circuits.