Author/Authors :
El Alaoui, M Department of Physics - Sidi Mohamed Ben Abdellah University - Morocco , Farah, F Department of Physics - Sidi Mohamed Ben Abdellah University - Morocco , El Khadiri, K Department of Physics - Sidi Mohamed Ben Abdellah University - Morocco , Qjidaa, H Department of Physics - Sidi Mohamed Ben Abdellah University - Morocco , Aarab, A Department of Physics - Sidi Mohamed Ben Abdellah University - Morocco , Lakhssassi, A Department of Computer Science and Engineering - University of Quebec in Outaouais - Canada , Tahiri, A Dept of Computer Science and Interdisciplinary Physics - Sidi Mohamed Ben Abdellah University - Morocco
Abstract :
In this work, the design and analysis of new Level Shifter with Gate Driver for Li-Ion battery charger is proposed for high speed and low area in 180nm CMOS technology. The new proposed level shifter is used to raise the voltage level and significantly reduces transfer delay 1.3ns (transfer delay of conventional level shifter) to 0.15ns with the same input signal. Also, the level shifter with gate driver achieves a propagation delay of less than 0.25ns and the total area is only 0.05mm2. The proposed level shifter with gate driver was designed, simulated and layouted in Cadence using TSMC 180nm CMOS technology.
Keywords :
Li-Ion Battery Charger , Level Shifter , Gate Driver , Propagation Delay
