Title of article
Performance evaluation of Carbon nanotube junctionless tunneling field effect transistor (CNT-JLTFET) under torsional strain: A quantum simulation study
Author/Authors
Moghadam ، Soheila Department of Electrical Engineering - Islamic Azad University, Nour Branch , Ghoreishi ، Saleh Department of Electrical Engineering - Islamic Azad University, Nour Branch , Yousefi ، Reza Department of Electrical Engineering - Islamic Azad University, Nour Branch , Adarang ، Habib Department of Electrical Engineering - Islamic Azad University, Nour Branch
From page
258
To page
266
Abstract
In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the on- and off-currents are reduced, thought that reduction has a greater percentage in the off-current, resulting in the increase in the ON/OFF current ratio. Besides, the switching characteristics of the device including power-delay product (PDP) and intrinsic delay (τ) have been studied.
Keywords
Band , Structure , Limited Velocity , Intrinsic Delay (τ) , Mode , Space , Power , Delay , Product (PDP) , Torsional Strain
Journal title
International Journal of Nano Dimension
Record number
2502210
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