Title of article
Hopping Conductivity in Single Crystals (Cd0.6Zn0.32Mn0.08)3As2
Author/Authors
Zakhvalinskii ، V. S. Department of General and Applied Physics - Belgorod State National Research University , Alam ، M. Department of Electrical and Electronic Engineering - University of Asia Pacific , Nikulicheva ، T. B. Department of General and Applied Physics - Belgorod State National Research University , Lahderanta ، E. Department of Mathematics and Physics - Lappeenranta University of Technology , Shakhov ، M. A. Laboratory of Kinetic Phenomena in a Solid at Low - Ioffe Institute Russia , Piljuk ، E. A. Department of General and Applied Physics - Belgorod State National Research University , Ivanchikhin ، S. V. Department of General and Applied Physics - Belgorod State National Research University , Kochura ، A. V. Regional Centre of Nanotechnology - South-West State University
From page
1771
To page
1775
Abstract
The growth processes of Tetragonal single crystals of solid solution (Cd0.6Zn0.32Mn0.08)3As2, space group P42/nmc, has been synthesized by Bridgman method. Conductivity and magnetoresistance of (Cd0.6Zn0.32Mn0.08)3As2 were measured in the range 1.6K to 300K and in magnetic field up to 25 T. Crossover from Mott variable-range-hopping conductivity mechanism close to helium temperatures. In this work, we found the width of the coulomb D = 0.21 meV and a rigid gap δ = 0.026 meV in the density of localized states, concentration and localization radius of charge carriers.
Keywords
single crystals , solid solutions , hopping conductivity , Dirac semimetal
Journal title
International Journal of Engineering
Record number
2502523
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