Title of article :
Switched-Capacitor Dynamic Threshold PMOS (SC-DTPMOS) Transistor for High Speed Sub-threshold Applications
Author/Authors :
Ashraf, M the Faculty of Electrical Engineering and Robotics - Shahrood University of Technology, Shahrood, Iran
Abstract :
This work studies the effects of dynamic threshold design techniques on the speed and power of digital circuits. A new dynamic threshold transistor structure has been proposed to improve performances of digital circuits. The proposed switched-capacitor dynamic threshold PMOS (SC-DTPMOS) scheme employs a capacitor along with an NMOS switch in order to effectively reduce the threshold voltage of a PMOS transistor. The proposed structure improves the propagation delay of a circuit and is much suitable for those circuits with high switching factor. Post layout simulation results using TSMC 180 nm CMOS technology at 0.2V supply voltage shows 45% improvement in delay as well as 25% less power consumption at the cost of only 53% more occupied area.
Keywords :
Low Power , High Speed , Dynamic Threshold. , Body Biasing , Sub-threshold
Journal title :
Iranian Journal of Electrical and Electronic Engineering(IJEEE)