Title of article
Electrical properties and I–V characteristics of 5,14-dihydro- 5,7,12,14-tetraazapentacene doped Schottky barrier diode
Author/Authors
Ghalami Bavil Olyaee, Hassan Islamic Azad University - South Tehran Branch - Iranshaher Shomali, Tehran , J. S. Foot, Peter Kingston University London - Penrhyn Road - Kingston upon Thames - Surrey, UK , Montgomery, Vincent Kingston University London - Penrhyn Road - Kingston upon Thames - Surrey, UK
Pages
5
From page
315
To page
319
Abstract
The current–voltage (I–V) characteristics of Aluminium/ 5,14-dihydro-5,7,12,14-tetraazapentacenes (L5H2 or DHTAPs) doped surface-type structures were investigated in air at ambient temperature and moisture. The conventional forward bias I–V method, Semi-logarithm, Cheung functions
and modified Norde’s function were used to extract the diode
parameters including ideality factor, series resistance and
barrier height. The parameter values obtained from these four
different methods were found in good agreement.
Keywords
Schottky diodes , 5,14-dihydro-5,7,12,14- tetraazapentacenes (L5H2 or DHTAPs) doped , Series resistance , Ideality factor , Barrier height
Journal title
Journal of Theoretical and Applied Physics
Serial Year
2015
Record number
2508636
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