Computational study of bandgapengineered Graphene nano ribbon tunneling fieldeffect transistor (BE-GNR-TFET)

By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling fieldeffect transistor (GNR-TFET), we propose a new bandgapengineered (BE) GNR-TFET. Simulation of the suggested device is done based on nonequilibrium Green’s function (NEGF) method by a modespace approach. Simulation results show that, compared to the conventional GNR-TFET, the BE-GNR-TFET enjoys from a better ambipolar behavior and a higher oncurrent. Besides, the analog characteristic of the proposed structure such as transconductance (gm) and unitygain frequency (ft) is also improved.