Title of article
A 3.1-10.6 GHZ Ultra-Wideband CMOS Low Noise Amplifier in 0.18 μm CMOS Technology
Author/Authors
Azimi-Roein Meysam Telecommunication Infrastructure Company - Bojnourd, Iran , Golmakani Abbas Sadjad University of Technology - Mashhad, Iran
Pages
4
From page
147
To page
150
Abstract
A new ultra-wideband 3.1-10.6 GHz low noise amplifier (LNA), designed in chartered 0.18μm technology, is presented in this paper. Series inductive peaking in the feedback loop is used to improve the bandwidth of the LNA. Based on the noise-canceling technique, voltage gain is increased. Measurements show that the S11 and S22 are less than -10 dB, and the maximum amplifier gain S21 gives 12.9dB, and the minimum noise figure is 2.6dB, and the power consumption is 13.6 mW from 1.8V supply voltage.
Keywords
Gain , Ultra-wideband , Low noise amplifier , CMOS
Journal title
Majlesi Journal of Telecommunication Devices
Serial Year
2016
Record number
2514035
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