Title of article :
Two Efficient Approaches for Improving Field Emission Properties of ZnO NRs
Author/Authors :
Advand Marziyeh Department of Electrical and Computer Engineering - Babol Noshirvani University of Technology - Babol, Iran , Azizolah Ganji Bahram Department of Electrical and Computer Engineering - Babol Noshirvani University of Technology - Babol, Iran , Kolahdouz Mohammadreza Department of Electrical and Computer Engineering University of Tehran - Tehran, Iran
Abstract :
The structure of pure and Al doped ZnO (AZO) nanorods (NRs) has been studied. A post annealing procedure in oxygen ambience at 400ْC were used in order to improve crystallinity of both group of samples. The XRD patterns illustrate that the Al doped ZnO NRs were successfully synthesized using our method. Then, the field emission properties of the as grown NRs before and after annealing process were evaluated by our home-made setup. Experimental results show that Al density in ZnO NRs directly affects FE properties of these samples. The oxygen post annealing process leads to a significant improvement in the field emission performances of pristine and doped ZnO NRs including considerably lower turn on voltage, and higher emission current.
Keywords :
Oxygen Vacancy , Oxygen Annealing , Field Emission , Al-doped Zinc Oxide , Nanorods , Zinc oxide
Journal title :
Majlesi Journal of Telecommunication Devices
