Title of article :
Strong Optical Filed Intensity Improvement Introducing InGaAsP Quantum Wells in InP Nanocavity
Author/Authors :
N, Ebadi Department of Electrical Engineering - Roshdiyeh Higher Education Institute, Tabriz, Iran
Abstract :
This paper presents the optical characteristics of a quantum well doped InP nanocavity.
The resonance wavelength of the nanocavity and the optical field intensity is calculated before and after presence of the quantum wells. The resulting huge filed intensity of about 1.2×108 respect to the incident field is the effect of quantum wells placed in vicinity of center of nanocavity.
Keywords :
Nanocavity , Quantum well , Photonic crystal
Journal title :
International Journal of Bio-Inorganic Hybrid Nanomaterials