Title of article :
Theoretical Study of Electronic Properties of the Semi-Conductors AlN and GaN With the Empirical Pseudopotential Method EPM
Author/Authors :
BENCHERIF, Kaddour University of Sidi Bel Abbes - Intelligent Control Electrical Power Systems Laboratory, ALGERIA , SEHIL, Mohamed ,University of Sidi Bel Abbes - Intelligent Control Electrical Power Systems Laboratory, ALGERIA , ABID, Hamza University of Sidi Bel Abbes - Applied Materials Laboratory, ALGERIA , Elhadi LOUHIBI, Mohamed University of Sidi Bel Abbes - Intelligent Control Electrical Power Systems Laboratory, ALGERIA
Abstract :
The electronic structure of binary compounds AlN and GaN are presented. We have used the empiricalpseudo-potential method. Good agreement between the calculated results and experiment is obtained. The charge densities are presented for the sum of the four valence bands of both AlN and GaN.
Keywords :
Empirical Pseudo , potential Method (EPM) , nitride aluminium , nitride gallium compounds , III , N semi , conductors , wide band gap semi , conductors , energy gap , charge density
Journal title :
Turkish Journal of Physics
Journal title :
Turkish Journal of Physics
