Title of article
Influence of doping and heat treatments on carriers mobility in polycrystalline silicon thin films for photovoltaic application
Author/Authors
ZAIDI, Beddiaf Universite Badji-Mokhtar - Faculte des Sciences - Departement de Physique, Laboratoire des Semi-Conducteurs, ALGERIE , HADJOUDJA, Bouzid Universite Badji-Mokhtar - Faculte des Sciences - Departement de Physique, Laboratoire des Semi-Conducteurs, ALGERIE , FELFLI, Houda Universite Badji-Mokhtar - Faculte des Sciences - Departement de Physique, Laboratoire des Semi-Conducteurs, ALGERIE , CHIBANI, Allaoua Universite Badji-Mokhtar - Faculte des Sciences - Departement de Physique, Laboratoire des Semi-Conducteurs, ALGERIE
From page
185
To page
188
Abstract
In this work, we investigate the influence of doping as well as heat treatments on the mobility of the carriers in polycrystalline silicon layers. It was found that any increase in both parameters leads to an increase in the mobility of the carriers. Such mobilities were shown to be higher in boron doped layers that those doped with arsenic. Moreover, for strong arsenic doping, after the initial increase, we observed a saturation region followed by a final decrease of carrier mobility.
Keywords
Solar photovoltaic cells , polycrystalline silicon , grain boundary , carrier mobility , doping , heattreatments
Journal title
Turkish Journal of Physics
Journal title
Turkish Journal of Physics
Record number
2528741
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