Title of article
Incidence angle and spectral effects on vertical junction silicon solar cell capacitance
Author/Authors
SANE, Moustapha Cheikh Anta Diop Universtity - Faculty of Science and Technology - Semiconductors and Solar Energy Laboratory, Senegal , SAHIN, Gokhan Cheikh Anta Diop Universtity - Faculty of Science and Technology - Semiconductors and Solar Energy Laboratory, Senegal , BARRO, Fabe Idrissa Cheikh Anta Diop Universtity - Faculty of Science and Technology - Semiconductors and Solar Energy Laboratory, SENEGAL , MAIGA, Amadou Seidou Gaston Berger University - Faculty of Applied Sciences and Technology - Electronics, Informatics, Telecommunications, and Renewable Energy Laboratory, Senegal
From page
221
To page
227
Abstract
The aim of this work is to present a theoretical study of a vertical junction silicon solar cell under monochromatic illumination. By solving the continuity equation and using a one-dimensional model in frequency modulation, we derive the analytical expressions of both excess minority carrier density and photovoltage. Based on these expressions, the solar cell capacitance was calculated; we then exhibited the effects of both illumination wavelength and incidence angle on the solar cell capacitance.
Keywords
Vertical junction , capacitance , frequency modulation
Journal title
Turkish Journal of Physics
Journal title
Turkish Journal of Physics
Record number
2528879
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