Title of article :
GaN nanostructuring for the fabrication of thin membranes and emerging applications
Author/Authors :
TIGINYANU, Ion Academy of Sciences of Moldova - Institute of Electronic Engineering and Nanotechnologies, Moldova , TIGINYANU, Ion Technical University of Moldova - National Center for Materials Study and Testing, Moldova , URSAKI, Veaceslav Academy of Sciences of Moldova - Institute of Electronic Engineering and Nanotechnologies, Moldova
From page :
328
To page :
368
Abstract :
We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.
Keywords :
GaN nanomembranes , wet etching , photoelectrochemical etching , dry etching , liftofi techniques , e , beam lithography , surface charge lithography , photonic crystal membrane nanocavities , sensors
Journal title :
Turkish Journal of Physics
Journal title :
Turkish Journal of Physics
Record number :
2528897
Link To Document :
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