Title of article
On the capacitance of crystalline silicon solar cells in steady state
Author/Authors
BARRO, Fabe Idrissa Cheikh Anta Diop University - Faculty of Science and Technology - Department of Physics, Semiconductors and Solar Energy Laboratory, Senegal , SANE, Moustapha Cheikh Anta Diop University - Faculty of Science and Technology - Department of Physics, Semiconductors and Solar Energy Laboratory, Senegal , ZOUMA, Bernard University of Ouagadougou - Department of Physics, Thermal and Renewable Energies Laboratory, Training and Research Unit in Pure and Applied Sciences, Burkina Faso
From page
122
To page
127
Abstract
In this work, an analytical approach is presented for modeling the capacitance of crystalline silicon solar cells. Based on a one-dimensional modeling of the cell, the excess minority carrier density, the photovoltage, and the capacitance are calculated. The motivation of this work are two-fold: to show base doping density and illumination effects on the capacitance of silicon solar cells, and to propose a determination technique for both dark capacitance and base doping density from C-V characteristics.
Keywords
Solar cell , doping , capacitance , illumination
Journal title
Turkish Journal of Physics
Journal title
Turkish Journal of Physics
Record number
2528925
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