Title of article :
On the capacitance of crystalline silicon solar cells in steady state
Author/Authors :
BARRO, Fabe Idrissa Cheikh Anta Diop University - Faculty of Science and Technology - Department of Physics, Semiconductors and Solar Energy Laboratory, Senegal , SANE, Moustapha Cheikh Anta Diop University - Faculty of Science and Technology - Department of Physics, Semiconductors and Solar Energy Laboratory, Senegal , ZOUMA, Bernard University of Ouagadougou - Department of Physics, Thermal and Renewable Energies Laboratory, Training and Research Unit in Pure and Applied Sciences, Burkina Faso
Abstract :
In this work, an analytical approach is presented for modeling the capacitance of crystalline silicon solar cells. Based on a one-dimensional modeling of the cell, the excess minority carrier density, the photovoltage, and the capacitance are calculated. The motivation of this work are two-fold: to show base doping density and illumination effects on the capacitance of silicon solar cells, and to propose a determination technique for both dark capacitance and base doping density from C-V characteristics.
Keywords :
Solar cell , doping , capacitance , illumination
Journal title :
Turkish Journal of Physics
Journal title :
Turkish Journal of Physics
