Author/Authors :
memişoʇlu, g. solar energy institute,ege university,bornova,izmir,turkey,vestel electronics,mos, Turkey , diker, h. solar energy institute,ege university,bornova,izmir,turkey,dyo boya fab. san. tic. a.ş.,aosb çiʇli, Turkey , varlikli, c. solar energy institute,ege university,bornova, Turkey , memişoʇlu, g. solar energy institute,ege university,bornova,izmir,turkey,vestel electronics,mos, Turkey , diker, h. solar energy institute,ege university,bornova,izmir,turkey,dyo boya fab. san. tic. a.ş.,aosb çiʇli, Turkey , varlikli, c. solar energy institute,ege university,bornova, Turkey
Abstract :
Graphene oxide (GO) material was synthesized by an improved Hummers method and characterized by FT-IR,XPS,XRD,AFM,SEM,and UV-VIS analyses. The thickness of the GO layer was measured as 1.5 nm. Solution processed bulk heterojunction solar cells comprising poly(3-hexylthiophene) (P3HT) as the electron donor and N,N -bis-2-(1-hydoxyhexyl)-3,4,9,10-perylenebis(dicarboximide) (HHPER) as the electron acceptor component of the active layer were produced with and without the GO doped PEDOT-PSS hole transport layers. The optical investigations of the active layer were performed by ground state absorption and photoluminescence measurements. Optimized blend w/w was determined as P3HT:HHPER,3:1. It was found that the presence of GO in PEDOT:PSS by 0.05 w/w reduces the charge transfer resistance and enhances not only the Jsc,but also Voc values. However,it cannot inhibit Voc losses obtained through annealing the active layer at temperatures higher than 120 ° C. © TÜBITAK.
