Title of article
ESD-Induced Noise to Low Noise Amplifier Circuits in BiCMOS
Author/Authors
CHEN, Guang On Semiconductor, USA , WANG, Xin University of California - Department of Electrical Engineering, USA , FAN, Siqiang Freescale Semiconductor Inc., USA , TANG, He University of California - Department of Electrical Engineering, USA , LIN, Lin University of California - Department of Electrical Engineering, USA , WANG, Albert University of California - Department of Electrical Engineering, USA
From page
259
To page
264
Abstract
Electrostatic discharge (ESD) induced parasitic effects have serious impacts on performance of radio frequency (RF) integrated circuits (IC). This paper discusses a comprehensive noise analysis procedure for ESD protection structures and their negative influences on RF ICs. Noise figures (NFs) of commonly used ESD protection structures and their impacts on a single-chip 5.5 GHz low-noise amplifier (LNA)circuit were depicted. A design example in 0.18 μm SiGe BiCMOS was presented. Measurement results confirm that significant noise degradation occurs in the LNA circuit due to ESD-induced noise effects. A practical design procedure for ESD-protected RF ICs is provided for real-world RF IC optimization.
Keywords
electrostatic discharge (ESD) protection , low , noise amplifier (LNA) , noise figures (NFs) , radio frequency (RF) , integrated circuits (IC)
Journal title
Tsinghua Science and Technology
Journal title
Tsinghua Science and Technology
Record number
2535289
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