Title of article :
The Extended Linear-Drift Model of Memristor and Its Piecewise Linear Approximation
Author/Authors :
Mu, Xiaomu Tsinghua University - Department of Automation, Tsinghua National Laboratory for Information Science and Technology, China , Yu, Juntang Tsinghua University - Department of Automation, Tsinghua National Laboratory for Information Science and Technology, China , Wang, Shuning Tsinghua University - Department of Automation, Tsinghua National Laboratory for Information Science and Technology, China
Abstract :
Memristor is introduced as the fourth basic circuit element. Memristor exhibits great potential for numerous applications, such as emulating synapse, while the mathematical model of the memristor is still an open subject. In the linear-drift model, the boundary condition of the device is not considered. This paper proposes an extended linear-drift model of the memristor. The extended linear-drift model keeps the linear characteristic and simplicity of the linear-drift model and considers the boundary condition of the device. A piecewise linear approximation model of the extended linear-drift model is given. Both models are suitable for describing the memristor.
Keywords :
memristor , mathematical model , piecewise linear , hysteresis
Journal title :
Tsinghua Science and Technology
Journal title :
Tsinghua Science and Technology
