Title of article :
Behavioral Modeling and Simulation of Semiconductor Devices and Circuits Using VHDL-AMS
Author/Authors :
Karimi, Gh. R. razi university - Electrical Engineering Department,, كرمانشاه, ايران , Mirzakuchaki, S. iran university of science and technology - Electrical Engineering Department,, تهران, ايران
From page :
165
To page :
175
Abstract :
During the past few years, a lot of work has been done on behavioral models and simulation tools. But a need for modeling strategy still remains. The VHDL-AMS language supports the description of analog electronic circuits using Ordinary Differential Algebraic Equations (ODAEs), in addition to its support for describing discrete-event systems. For VHDL-AMS to be useful to the analog design community, efficient semiconductor device models must be available. In this paper, potential merits of the new IEEE VHDL-AMS standard in the field of modeling semiconductor devices are discussed. The device models for diodes and the principles, techniques, and methodology used to achieve the design of an analytical third generation Spice transistor MOS model named EKV are presented. This is done by taking into account the thermoelectrical effect in VHDL-AMS, and with relevant parameters set to match a deep submicron technology developed in VHDL-AMS. The models were validated using System Vision from Mentor Graphics.
Keywords :
Behavioral Models , EKV Transistor , ODAE , Semiconductor Devices , Thermoelectrical Effect , VHDL , AMS.
Journal title :
Iranian Journal of Electrical and Electronic Engineering(IJEEE)
Journal title :
Iranian Journal of Electrical and Electronic Engineering(IJEEE)
Record number :
2551198
Link To Document :
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