Nanoporous GaN Film Generated by Electro Chemical Etching

This article reports on the studies of structural and optical properties of nanoporous GaN prepared by Pt assisted electro chemical etching. The porous GaN samples were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical transmission (OT). SEM images liang indicated that the density of the pores increased with etching duration, however, the etching duration has no significant effect on the size and shape of the pores. AFM measurements exhibited that the surface roughness was increased with etching durations, however, for long etching duration, the increase of the surface roughness became insignificant. OT measurements revealed that the increase of pore density would lead to the reduction of light transmission. The studies showed that the porosity could influence the structural and optical properties of the GaN.