Author/Authors :
MOHAMMADI, HOSSEIN Universiti Kebangsaan Malaysia - Faculty of Engineering - Department of Electrical, Electronic and Systems Engineering, Malaysia , ABDULLAH, HUDA Universiti Kebangsaan Malaysia - Faculty of Engineering - Department of Electrical, Electronic and Systems Engineering, Malaysia , DEE, CHANG FU Universiti Kebangsaan Malaysia - Institute of Microengineering and Nanoelectronics (IMEN), Malaysia
Abstract :
This paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly.
Keywords :
Multi , gate SOI MOSFETs , natural channel length , potential distribution , short channel effects