Title of article
Simulation on the Roles of the Number of Quantum Well and Doping in In xGa1-x N Multiple Quantum Wells LEDs
Author/Authors
ZAINAL, N. Universiti Sains Malaysia - School of Physics - Nano-optoelectronics Research and Technology, Malaysia , AZIMAH, E. Universiti Sains Malaysia - School of Physics - Nano-optoelectronics Research and Technology, Malaysia , HASSAN, Z. Universiti Sains Malaysia - School of Physics - Nano-optoelectronics Research and Technology, Malaysia , ABU HASSAN, H. Universiti Sains Malaysia - School of Physics - Nano-optoelectronics Research and Technology, Malaysia , HASHIM, M. R. Universiti Sains Malaysia - School of Physics - Nano-optoelectronics Research and Technology, Malaysia
From page
1557
To page
1564
Abstract
In this work, the emission efficiency of In x Ga1-x N based light emitting diodes (LEDs) had been numerically investigated with the variation of the number of quantum well. From our calculation, we found that non-uniformity of carriers distribution (especially electron) in the wells leads to serious inhomogeneity of radiative recombination distribution that would degrade the efficiency of the LED with more wells. However, the problem was minimized when the selected quantum barriers were doped with a reasonable doping level. Comparison with other reported experimental works were also included. At the end of this work, we proposed several types of preferable LEDs designs with optimum structural parameters.
Keywords
Light emitting diodes , numerical simulation , optical properties , III , V semiconductors
Record number
2556021
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