Author/Authors :
Hossain, M.S. Rajshahi University - Department of Mathematics, Bangladesh , Aliyu, M.M. Universiti Kebangsaan Malaysia - Faculty of Engineering and Built Environment - Department of Electrical, Electronic Systems Engineering, Malaysia , Matin, M.A Universiti Kebangsaan Malaysia - Faculty of Engineering and Built Environment - Department of Electrical, Electronic Systems Engineering, Malaysia , Islam, M.A. Khulna University - Life Science School, Bangladesh , Karim, M.R. Universiti Kebangsaan Malaysia - Department of Civil and Structural Engineering, Malaysia , Razykov, T. King Saud University - Center of Excellence for Research in Engineering Materials (CEREM), Saudi Arabia , Sopian, K. Universiti Kebangsaan Malaysia - Faculty of Engineering - Solar Energy Research Institiute, Malaysia , Amina, N. Universiti Kebangsaan Malaysia - Faculty of Engineering and Built Environment - Department of Electrical, Electronic Systems Engineering, Malaysia , Amina, N. Universiti Kebangsaan Malaysia - Solar Energy Research Institute, Malaysia , Amina, N. King Saud University - Center of Excellence for Research in Engineering Materials (CEREM), Saudi Arabia
Abstract :
This paper describes numerical simulation for ZnxCd1-xS/CdTe solar cells utilizing Analysis of Microelectronic and Photonic Structures (AMPS 1D) simulator to explore the possibility of higher efficiency and stable among several cell structures with indium tin oxide (ITO) and cadmium stannate (Cd2SnO4) as front contact, zinc stannate (Zn2SnO4) and zinc oxide (ZnO) insertion as front back surface reflector (BSR) and zinc telluride (ZnTe) insertion as back BSR with copper (Cu) as back contact has been conducted in the conventional (SnO2/CdS/CdTe/Ag) CdTe cell structures in which CdS is replaced by zinc cadmium sulphide (ZnxCd1-xS) as window layer. Efficiency as high as 18.4% has been found with 60 nm of ZnxCd1-xS window layer for x=0.15, 1 μm of CdTe layer and 100 nm Zn2SnO4 buffer layer without ZnTe. However, ZnO insertion shows low conversion efficiency of 8.92% and 13.35%, respectively with and without ZnTe. Moreover, it was found that the cell normalized efficiency linearly decreases with the increasing operating temperature at the temperature gradient of -0.35%/°C.
Keywords :
Zn2SnO4 , buffer layer , ZnxCd1 , xS , AMPS , 1D
