Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector

In this paper we report on the effect of rapid thermal annealing (RTA) on the characteristics of diffused crystalline p-n Si one-dimensional (1-D) position sensitive detector (PSD). The Si-PSDs are made with planer technology using thermal diffusion technique for Si doping. The lateral voltage produced by irradiation of He-Ne laser on PSD was parallel to the plane of junction and dependence linearly on laser spot position. The PSD that treated with best RTA condition (850 °C/15s) exhibited higher position sensitivity (104μV/mm) as compared with that for untreated PSD (31μV/mm).Furthermore, the best PSD gave a non-linearity error of 1.46%. The performance improvement factors such as uniformity, linearity, and responsivity of annealed Si-PSDs are presented and analyzed.