Title of article
Temperature Dependence of I-V Characteristics in CNTFET Models: A Comparison
Author/Authors
Marani ، Roberto Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA) - National Research Council of Italy , Perri ، Anna Gina Department of Electrical and Information Engineering, Electronic Devices Laboratory - Polytechnic University of Bari
From page
33
To page
39
Abstract
In this paper we present a comparison of temperature dependence of I-V characteristics in Carbon Nanotube Field Effect Transistor (CNTFET) models proposed in the literature in order to identify the one more easily implementable in simulation software for electronic circuit design. At first we consider a compact, semiempirical model, already proposed by us, performing I-V characteristic simulations at different temperatures. Our results are compared with those obtained with the StanfordSource Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET), obtaining IV characteristics comparable, but with CPU calculation times much lower.
Keywords
CNTFET , I , V characteristics , Temperature effects
Journal title
International Journal of Nanoscience and Nanotechnology (IJNN)
Journal title
International Journal of Nanoscience and Nanotechnology (IJNN)
Record number
2572262
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