Title of article
Crosstalk Enhancement in 32 nm FD SOI MOSFET using HR Substrate and Multilayer BOX
Author/Authors
Tavanazadeh, Parisa M.Sc student, Islamic Azad University, Najaf Abad Branch, Isfahan, Iran, ايران , Daghighi, Arash shahrekord university, شهركرد, ايران , Mahdavi Nasab, Homayoon Assistant Professor, Faculty of Engineering, Islamic Azad University, Najaf Abad Branch, Isfahan, Iran, ايران
From page
38
To page
43
Abstract
In this paper, the crosstalk in 32 nm UTB SOI MOSFET is examined by using a new structure, a high resistivity substrate, and a multilayer BOX (SiO2-Diamond). The electrical and thermal characteristics of the conventional SOI and a multilayer BOX SOI are compared, and it is concluded that parasitic capacitances and crosstalk are improved by incorporating multilayer BOX to a HR Substrate. In a conventional HR FD SOI, crosstalk is approximately -121dB, while by incorporating multilayer BOX substrate and increasing the thickness of the Diamond to 100nm, crosstalk can be reduced by 20%.
Keywords
Ultra Thin Body Silicon , on , Insulator MOSFET , Parasitic Capacitance , High Resistivity Substrate , Crosstalk , Diamond ,
Journal title
Majlesi Journal of Electrical Engineering
Journal title
Majlesi Journal of Electrical Engineering
Record number
2573032
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