Thermoelectric Characterization of Thallium Gallium Disulphide, TlGaS2

TlGaS2 single crystal, were prepared by a special design based on Bridgman technique Thermoelectric power measurements were carried out in a brass working chamber designed for this purpose, allow measurements in a wide range of temperature under vacuum. Our investigation showed that our samples are p-type conducting. The mobility of charge carrier, holes and electrons was found. The effective masses of the majority and minority carriers were deduced. Also the diffusion coefficient, relaxation time and diffusion length for electrons and holes were calculated. In addition to these pounced parameters, the efficiency of the thermoelectric element (figure of merit) was evaluated which leads to better application in energy conservation technique.